dec.2009.version1.2 magnachipsemiconductorltd . 1 mdf9n50nchannelmosfet500v absolutemaximumratings(ta=25 o c) characteristics symbol rating unit drainsourcevoltage v dss 500 v gatesourcevoltage v gss 30 v t c =25 o c 9.0 a continuousdraincurrent( ) t c =100 o c i d 5.5 a pulseddraincurrent (1) i dm 36 a t c =25 o c 38 powerdissipation derateabove25 o c p d 0.3 w w/ o c peakdioderecoverydv/dt (3) dv/dt 4.5 v/ns singlepulseavalancheenergy (4) e as 300 mj junctionandstoragetemperaturerange t j ,t stg 55~150 o c idlimitedbymaximumjunctiontemperature thermalcharacteristics characteristics symbol rating unit thermalresistance,junctiontoambient (1) r ja 62.5 thermalresistance,junctiontocase (1) r jc 3.3 o c/w mdf9n50 nchannelmosfet500v,9.0a,0.85 ? general description themdf9n50usesadvancedmagnachipsmosfet technology,whichprovideslowonstateresistance, high switchingperformanceandexcellentquality. mdf9n50issuitabledeviceforsmps,highspeedswi tching andgeneralpurposeapplications. f eatures v ds =500v i d =9.0 @v gs =10v r ds(on) 0.85 @v gs =10v applications powersupply hid lighting s d g
dec.2009.version1.2 magnachipsemiconductorltd . 2 mdf9n50nchannelmosfet500v orderinginformation partnumber temp.range package packing rohsstatus MDF9N50TH 55~150 o c to220f tube halogenfree electricalcharacteristics(ta=25 o c) characteristics symbol testcondition min typ max unit staticcharacteristics drainsourcebreakdownvoltage bv dss i d =250a,v gs =0v 500 gatethresholdvoltage v gs(th) v ds =v gs ,i d =250a 3.0 5.0 v draincutoffcurrent i dss v ds =500v,v gs =0v 1 a gateleakagecurrent i gss v gs =30v,v ds =0v 100 na drainsourceonresistance r ds(on) v gs =10v,i d =4.5a 0.72 0.85 forwardtransconductance g fs v ds =30v,i d =4.5a 7 s dynamiccharacteristics totalgatecharge q g 19 gatesourcecharge q gs 5.7 gatedraincharge q gd v ds =400v,i d =9.0a,v gs =10v (3) 7.6 nc inputcapacitance c iss 780 reversetransfercapacitance c rss 4.0 outputcapacitance c oss v ds =25v,v gs =0v,f=1.0mhz 100 pf turnondelaytime t d(on) 18 risetime t r 34 turnoffdelaytime t d(off) 38 falltime t f v gs =10v,v ds =250v,i d =9.0a, r g =25 (3) 27 ns drainsourcebodydiodecharacteristics maximumcontinuousdrainto sourcediodeforwardcurrent i s 9.0 a sourcedraindiodeforward voltage v sd i s =9.0a,v gs =0v 1.4 v bodydiodereverserecovery time t rr 272 ns bodydiodereverserecovery charge q rr i f =9.0a,dl/dt=100a/s (3) 2.0 c note: 1.pulsewidthisbasedonr jc &r ja andthemaximumallowedjunctiontemperatureof150 c. 2.pulsetest:pulsewidth 300us,dutycycle 2%,pulsewidthlimitedbyjunctiontemperaturet j(max) =150 c. 3. i sd 9.0a,di/dt 200a/us,v dd =50v,r g =25,startingt j =25 c 4.l=5.1mh, i as =9.0a, v dd =50v,r g =25,startingt j =25 c
dec.2009.version1.2 magnachipsemiconductorltd . 3 mdf9n50nchannelmosfet500v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 1 10 100 25 150 notes: 1.v gs =0v 2.i d =250 ? i dr reversedraincurrent[a] v sd ,sourcedrainvoltage[v] fig. 5 transfercharacteristics fig.1onregioncharacteristics fig. 2 on resistancevariationwith draincurrentandgatevoltage fig. 3 on resistancevariationwith temperature fig. 4 breakdown voltage variation vs. temperature fig. 6 body diode forward voltage variation with source current and temperature 0 5 10 15 20 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 v gs =10.0v v gs =20v r ds(on) [ ] i d ,draincurrent[a] 50 25 0 25 50 75 100 125 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 v gs =10v v gs =4.5v notes: 1.v gs =10v 2.i d =5a r ds(on) ,(normalized) drainsourceonresistance t j ,junctiontemperature[ o c] 4 5 6 7 8 1 10 25 *notes; 1. v ds =30v 150 55 i d [a] v gs [v] 0.1 1 10 0.1 1 10 notes 1.250 ? pulsetest 2.t c =25 v gs =5.5v =6.0v =6.5v =7.0v =8.0v =10.0v i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes: 1.v gs =0v 2.i d =250 ? bv dss ,(normalized) drainsourcebreakdownvoltage t j ,junctiontemperature[ o c]
dec.2009.version1.2 magnachipsemiconductorltd . 4 mdf9n50nchannelmosfet500v fig.7gatechargecharacteristics fig.8capacitancecharacteristics fig.9maximumsafeoperatingarea fig. 10 maximum drain current v s. case temperature fig.11transientthermalresponsecurve fig .12 single pulse maximum power dissipation 10 1 10 0 10 1 10 2 10 2 10 1 10 0 10 1 10 2 10 s 100 s 100ms dc 10ms 1ms operationinthisarea islimitedbyr ds(on) singlepulse t j =maxrated t c =25 i d ,draincurrent[a] v ds ,drainsourcevoltage[v] 25 50 75 100 125 150 0 2 4 6 8 10 i d ,draincurrent[a] t c ,casetemperature[ ] 1e5 1e4 1e3 0.01 0.1 1 10 0 2000 4000 6000 8000 10000 singlepulse r thjc =3.3 /w t c =25 power(w) pulsewidth(s) 10 5 10 4 10 3 10 2 10 1 10 0 10 1 10 2 10 1 10 0 notes: dutyfactor,d=t 1 /t 2 peakt j =p dm *z jc *r jc (t)+t c r jc =3.3 /w singlepulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), normalizedthermalresponse t 1 ,rectangularpulseduration[sec] 0.1 1 10 0 200 400 600 800 1000 1200 1400 c iss =c gs +c gd (c ds =shorted) c oss =c ds +c gd c rss =c gd notes; 1.v gs =0v 2.f=1mhz c rss c oss c iss capacitance[pf] v ds ,drainsourcevoltage[v] 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 10 400v 250v 100v note:i d =9.0a v gs ,gatesourcevoltage[v] q g ,totalgatecharge[nc]
dec.2009.version1.2 magnachipsemiconductorltd . 5 mdf9n50nchannelmosfet500v physicaldimension 3leads,to220f dimensionsareinmillimetersunlessotherwisespec ified s y mbol min nom max a 4.50 4.93 b 0.63 0.91 b1 1.15 1.47 c 0.33 0.63 d 15.47 16.13 e 9.60 10.71 e 2.54 f 2.34 2.84 g 6.48 6.90 l 12.24 13.72 l1 2.79 3.67 q 2.52 2.96 q 1 3.10 3.50 r 3.00 3.55
dec.2009.version1.2 magnachipsemiconductorltd . 6 mdf9n50nchannelmosfet500v worldwidesalessupportlocations u.s.a sunnyvaleoffice 787n.maryave.sunnyvale ca94085u.s.a tel:14086365200 fax:14082132450 email:usasales@magnachip.com u.k knyvetthousethecauseway, stainesmiddx,tw183ba,u.k. tel:+44(0)1784895000 fax:+44(0)1784895115 email:uksales@magnachip.com japan osakaoffice 3f,shinosakamt2bldg3536 miyaharayodogawaku osaka,5320003japan tel:81663949160 fax:81663949150 email:osakasales@magnachip.com taiwanr.o.c 2f,no.61,chowizestreet,neihu taipei,114taiwanr.o.c tel:886226577898 fax:886226578751 email:taiwansales@magnachip.com china hongkongoffice suite1024,oceancentre5cantonroad, tsimshatsuikowloon,hongkong tel:85228289700 fax:85228028183 email:chinasales@magnachip.com shenzhenoffice room2003b,20/f internationalchamberofcommercetower fuhuaroad3cbd,futiandistrict,china tel:8675588315561 fax:8675588315565 email:chinasales@magnachip.com shanghaioffice roome,8/f,liaosheninternationalbuilding1068 wuzhongroad,(c)201103 shanghai,china tel:862164051521 fax:862165051523 email:chinasales@magnachip.com korea 891,daechidong,kangnamgu seoul,135738korea tel:82269033451 fax:82269033668~9 email:koreasales@magnachip.com disclaimer: theproductsarenotdesignedforuseinhostileen vironments,including,withoutlimitation,aircraft ,nuclearpower generation, medical appliances, and devices or syst ems in which malfunction of any product can reasona bly be expected to result in a personal injury. sellers customers using or selling sellers products for us e in such applicationsdosoattheirownriskandagreetof ullydefendandindemnifyseller. \ magnachipreservestherighttochangethespecific ationsandcircuitrywithoutnoticeatanytime.ma gnachipdoesnotconsiderresponsibility for use of any circuitry other than circuitry entir ely included in a magnachip product. is a registered trademark of magnachip semiconductorltd.
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